Assignee
XU HUIWEN
US·10 granted patents·2 pending applications·558 citations·filing 2007–2010
Top patents by PatentIndex Score
12 records- 0198US8445075B2Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectricsXU HUIWEN·Filed 2010·Granted May 21, 2013·517 cites·10 claims
- 0290US8551855B2Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the sameXU HUIWEN·Filed 2010·Granted Oct 8, 2013·11 cites·19 claims
- 0390US8114765B2Methods for increased array feature densityXU HUIWEN·Filed 2010·Granted Feb 14, 2012·8 cites·21 claims
- 0483US8569730B2Carbon-based interface layer for a memory device and methods of forming the sameXU HUIWEN·Filed 2009·Granted Oct 29, 2013·8 cites·8 claims
- 0580US8093123B2Integration methods for carbon films in two- and three-dimensional memories formed therefromXU HUIWEN·Filed 2009·Granted Jan 10, 2012·6 cites·28 claims
- 0677US8466044B2Memory cell that includes a carbon-based memory element and methods forming the sameXU HUIWEN·Filed 2009·Granted Jun 18, 2013·4 cites·56 claims
- 0770US8481396B2Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the sameXU HUIWEN·Filed 2010·Granted Jul 9, 2013·2 cites·17 claims
- 0864US8557685B2Memory cell that includes a carbon-based memory element and methods of forming the sameXU HUIWEN·Filed 2009·Granted Oct 15, 2013·1 cites·20 claims
- 0957US8309415B2Methods and apparatus for increasing memory density using diode layer sharingXU HUIWEN·Filed 2009·Granted Nov 13, 2012·0 cites·28 claims
- 1051US2007287301A1Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectricsXU HUIWEN·Filed 2007·Application pending·0 cites
- 1148US8470646B2Modulation of resistivity in carbon-based read-writeable materialsXU HUIWEN·Filed 2009·Granted Jun 25, 2013·1 cites·17 claims
- 1238US2011278529A1Memory employing diamond-like carbon resistivity-switchable material and methods of forming the sameXU HUIWEN·Filed 2010·Application pending·0 cites
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