Assignee
TAKAHATA MASAHIRO
JP·4 granted patents·2 pending applications·3 citations·filing 2008–2012
Top patents by PatentIndex Score
6 records- 0168US9234257B2Production method for high-purity lanthanum, high-purity lanthanum, sputtering target composed of high-purity lanthanum, and metal gate film containing high-purity lanthanum as main componentTAKAHATA MASAHIRO·Filed 2011·Granted Jan 12, 2016·1 cites·4 claims
- 0259US8980169B2High-purity lanthanum, sputtering target comprising high-purity lanthanum, and metal gate film mainly comprising high-purity lanthanumTAKAHATA MASAHIRO·Filed 2008·Granted Mar 17, 2015·1 cites·8 claims
- 0354US9013009B2Method for producing high-purity lanthanum, high-purity lanthanum, sputtering target formed from high-purity lanthanum, and metal gate film having highy-purity lanthanum as main componentTAKAHATA MASAHIRO·Filed 2012·Granted Apr 21, 2015·1 cites·20 claims
- 0451US10041155B2High-purity yttrium, process of producing high-purity yttrium, high-purity yttrium sputtering target, metal gate film deposited with high-purity yttrium sputtering target, and semiconductor element and device equipped with the metal gate filmTAKAHATA MASAHIRO·Filed 2011·Granted Aug 7, 2018·0 cites·20 claims
- 0545US2014124366A1High-purity erbium, sputtering target comprising high-purity erbium, metal gate film having high-purity erbium as main component thereof, and production method for high-purity erbiumTAKAHATA MASAHIRO·Filed 2011·Application pending·0 cites
- 0637US2014199203A1High-purity lanthanum, method for producing same, sputtering target comprising high-purity lanthanum, and metal gate film comprising high-purity lanthanum as main componentTAKAHATA MASAHIRO·Filed 2012·Application pending·0 cites
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