Assignee

SOFIE INSTR

FR·1 granted patent·19 citations·filing 1996–1996

Technology mixG01B1 H10P1

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0148US5748296AMethod and device for in situ quantification, by reflectometry, of the morphology of a localized region during etching of the surface layer of a thin-film structureSOFIE INSTR·Filed 1996·Granted May 5, 1998·19 cites·12 claims

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