Assignee
OGIMOTO YASUSHI
JP·12 granted patents·1 pending application·13 citations·filing 2008–2012
Top patents by PatentIndex Score
13 records- 0176US8750028B2Magnetic memory element and driving method for sameOGIMOTO YASUSHI·Filed 2010·Granted Jun 10, 2014·3 cites·11 claims
- 0271US9041388B2Non-contact current sensorOGIMOTO YASUSHI·Filed 2010·Granted May 26, 2015·2 cites·4 claims
- 0364US8932699B2Crystalline substance, substrate, and method for producing crystalline substanceOGIMOTO YASUSHI·Filed 2012·Granted Jan 13, 2015·1 cites·3 claims
- 0463US9070816B2Thermoelectric conversion structure and method of manufacturing sameOGIMOTO YASUSHI·Filed 2012·Granted Jun 30, 2015·0 cites·9 claims
- 0562US8878322B2Perovskite manganese oxide thin film and manufacturing method thereforOGIMOTO YASUSHI·Filed 2011·Granted Nov 4, 2014·0 cites·10 claims
- 0660US8279661B2Magnetic memory element, driving method for the same, and nonvolatile storage deviceOGIMOTO YASUSHI·Filed 2008·Granted Oct 2, 2012·4 cites·20 claims
- 0760US8274820B2Magnetic memory element, method of driving same, and nonvolatile storage deviceOGIMOTO YASUSHI·Filed 2008·Granted Sep 25, 2012·1 cites·23 claims
- 0854US8872016B2Thermoelectric conversion structure and method of manufacturing sameOGIMOTO YASUSHI·Filed 2012·Granted Oct 28, 2014·0 cites·6 claims
- 0953US8871364B2Perovskite manganese oxide thin filmOGIMOTO YASUSHI·Filed 2011·Granted Oct 28, 2014·0 cites·20 claims
- 1052US8709617B2Magnetic memory element, driving method for same, and nonvolatile storage deviceOGIMOTO YASUSHI·Filed 2008·Granted Apr 29, 2014·2 cites·20 claims
- 1150US8929131B2Magnetic memory element and non-volatile storage deviceOGIMOTO YASUSHI·Filed 2009·Granted Jan 6, 2015·0 cites·20 claims
- 1245US8778513B2Perovskite manganese oxide thin filmOGIMOTO YASUSHI·Filed 2012·Granted Jul 15, 2014·0 cites·6 claims
- 1339US2013200457A1Strongly correlated oxide field effect elementOGIMOTO YASUSHI·Filed 2012·Application pending·0 cites
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