Assignee

NUVOSON INC

US·1 granted patent·0 citations·filing 2015–2015

Technology mixC22C1 C23C1 H01L1 H10F1 H10N1 H10P1

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0122US9947531B2High rate sputter deposition of alkali metal-containing precursor films useful to fabricate chalcogenide semiconductorsNUVOSON INC·Filed 2015·Granted Apr 17, 2018·0 cites·14 claims

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