Assignee
NEOSEMITECH CORP
KR·3 granted patents·2 citations·filing 2006–2009
Top patents by PatentIndex Score
3 records- 0139US7767021B2Growing method of SiC single crystalNEOSEMITECH CORP·Filed 2006·Granted Aug 3, 2010·0 cites·11 claims
- 0239US7524708B2Fabrication method of a high brightness light emitting diode with a bidirectionally angled substrateNEOSEMITECH CORP·Filed 2006·Granted Apr 28, 2009·2 cites·5 claims
- 0330US7679165B2High brightness light emitting diode with a bidirectionally angled substrateNEOSEMITECH CORP·Filed 2009·Granted Mar 16, 2010·0 cites·4 claims
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