Assignee
NEOPOLY INC
KR·4 granted patents·6 citations·filing 2003–2005
Top patents by PatentIndex Score
4 records- 0160US7749826B2Method of fabricating thin film transistor using metal induced lateral crystallization by etch-stopper layer patternsNEOPOLY INC·Filed 2005·Granted Jul 6, 2010·2 cites·2 claims
- 0249US6936504B2Poly-silicon thin film transistor having back bias effects and fabrication method thereofNEOPOLY INC·Filed 2003·Granted Aug 30, 2005·4 cites·6 claims
- 0338US7906382B2Method of crystallizing amorphous semiconductor thin film and method of fabricating poly-crystalline thin film transistor using the sameNEOPOLY INC·Filed 2005·Granted Mar 15, 2011·0 cites·5 claims
- 0436US7749777B2Method of applying electrical stress to low-temperature poly-crystalline thin film transistorNEOPOLY INC·Filed 2005·Granted Jul 6, 2010·0 cites·7 claims
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