Assignee

MOS EPI INC

US·2 granted patents·6 citations·filing 1999–2002

Technology mixB24B1 H10P1 Y10S1

Top patents by PatentIndex Score

2 records

0145US6599758B2Post-epitaxial thermal oxidation for reducing microsteps on polished semiconductor wafersMOS EPI INC·Filed 2002·Granted Jul 29, 2003·2 cites·1 claims
0227US6135864ASolid phase water scrub for defect removalMOS EPI INC·Filed 1999·Granted Oct 24, 2000·4 cites·11 claims

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