Assignee
LIN MEI-HSUAN
TW·7 granted patents·12 citations·filing 2011–2012
Top patents by PatentIndex Score
7 records- 0185US8533639B2Optical proximity correction for active region design layoutLIN MEI-HSUAN·Filed 2011·Granted Sep 10, 2013·7 cites·20 claims
- 0270US8994097B2MOS devices having non-uniform stressor dopingLIN MEI-HSUAN·Filed 2012·Granted Mar 31, 2015·2 cites·20 claims
- 0368US8513143B2Semiconductor structure and method of manufacturingLIN MEI-HSUAN·Filed 2011·Granted Aug 20, 2013·2 cites·19 claims
- 0461US8470660B2Method of manufacturing a semiconductor deviceLIN MEI-HSUAN·Filed 2011·Granted Jun 25, 2013·1 cites·20 claims
- 0552US9343318B2Salicide formation using a cap layerLIN MEI-HSUAN·Filed 2012·Granted May 17, 2016·0 cites·5 claims
- 0647US8846492B2Integrated circuit having a stressor and method of forming the sameLIN MEI-HSUAN·Filed 2011·Granted Sep 30, 2014·0 cites·20 claims
- 0740US8527915B2Method and system for modifying doped region design layout during mask preparation to tune device performanceLIN MEI-HSUAN·Filed 2011·Granted Sep 3, 2013·0 cites·14 claims
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