Assignee
LI TIESHENG
US·4 granted patents·2 pending applications·21 citations·filing 2009–2012
Technology mixH10D6
Top patents by PatentIndex Score
6 records- 0188US8723178B2Integrated field effect transistors with high voltage drain sensingLI TIESHENG·Filed 2012·Granted May 13, 2014·10 cites·11 claims
- 0283US8735968B2Integrated MOSFET devices with Schottky diodes and associated methods of manufacturingLI TIESHENG·Filed 2010·Granted May 27, 2014·7 cites·11 claims
- 0369US8525260B2Super junction device with deep trench and implantLI TIESHENG·Filed 2010·Granted Sep 3, 2013·3 cites·13 claims
- 0458US8680614B2Split trench-gate MOSFET with integrated Schottky diodeLI TIESHENG·Filed 2012·Granted Mar 25, 2014·1 cites·22 claims
- 0544US2011057259A1Method for forming a thick bottom oxide (tbo) in a trench mosfetLI TIESHENG·Filed 2009·Application pending·0 cites
- 0635US2012104467A1Self-aligned contact structure trench jfetLI TIESHENG·Filed 2010·Application pending·0 cites
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