Assignee
KAMMLER THORSTEN
DE·4 granted patents·2 pending applications·8 citations·filing 2005–2011
Top patents by PatentIndex Score
6 records- 0174US8481404B2Leakage control in field effect transistors based on an implantation species introduced locally at the STI edgeKAMMLER THORSTEN·Filed 2010·Granted Jul 9, 2013·4 cites·20 claims
- 0271US8198166B2Using high-k dielectrics as highly selective etch stop materials in semiconductor devicesKAMMLER THORSTEN·Filed 2010·Granted Jun 12, 2012·3 cites·17 claims
- 0363US8906811B2Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition processKAMMLER THORSTEN·Filed 2011·Granted Dec 9, 2014·1 cites·9 claims
- 0441US2006172511A1In situ formed halo region in a transistor deviceKAMMLER THORSTEN·Filed 2005·Application pending·0 cites
- 0540US8569143B2Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI)KAMMLER THORSTEN·Filed 2011·Granted Oct 29, 2013·0 cites·16 claims
- 0639US2007200176A1Formation of silicided surfaces for silicon/carbon source/drain regionsKAMMLER THORSTEN·Filed 2006·Application pending·0 cites
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