Assignee

KAMATA TADASHI

JP·1 granted patent·113 citations·filing 1992–1992

Technology mixH01J1 H10B1 H10P1 Y10S1

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0184US5244820ASemiconductor integrated circuit device, method for producing the same, and ion implanter for use in the methodKAMATA TADASHI·Filed 1992·Granted Sep 14, 1993·113 cites·37 claims

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