Assignee

INTERUNIVERSTAIR MICROELEKTRON

US·1 granted patent·8 citations·filing 2003–2003

Technology mixH10P1 H10W1 Y10S1

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0153US6806501B2Integrated circuit having SiC layerINTERUNIVERSTAIR MICROELEKTRON·Filed 2003·Granted Oct 19, 2004·8 cites·19 claims

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