Assignee
BURNETT JAMES D
US3 patents
Top patents by PatentIndex Score
US9111638B2Aug 18, 2015
SRAM bit cell with reduced bit line pre-charge voltage
BURNETT JAMES D4 citations71
US8283244B2Oct 9, 2012
Method for forming one transistor DRAM cell structure
BURNETT JAMES D2 citations61
US8088657B2Jan 3, 2012
Integrated circuit using FinFETs and having a static random access memory (SRAM)
BURNETT JAMES D0 citations50