Assignee

ARGOUD MAXIME

FR·1 granted patent·0 citations·filing 2011–2011

Technology mixB32B1 C23C1 H01L1 H10P1 H10W1 Y02P1

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0131US8906780B2Method for transferring a thin layer of monocrystalline siliconARGOUD MAXIME·Filed 2011·Granted Dec 9, 2014·0 cites·12 claims

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